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MBT4403 PNP transistors（BJT） -40V -600mA/- 0.6A 200MHz 100~300 -750mV/-0.75V SOT-23/SC-59 marking 2T high breakdown voltage
| 集电极-基极反向击穿电压V(BR)CBO Collector-Base Voltage(VCBO) | -40V |
| 集电极-发射极反向击穿电压V(BR)CEO Collector-Emitter Voltage(VCEO) | −40V |
| 集电极连续输出电流IC Collector Current(IC) | −600mA/- 0.6A |
| 截止频率fT Transtion Frequency(fT) | 200MHz |
| 直流电流增益hFE DC Current Gain(hFE) | 100~300 |
| 管压降VCE（sat） Collector-Emitter SaturationVoltage | -750mV/-0.75V |
| 耗散功率Pc PoWer Dissipation | 225mW/0.225W |
| Description & Applications | PNP epitaxial planar transistor Description The HMBT4403 is designed for general purpose applications requiring high breakdown voltages |
| 描述与应用 | PNP外延平面晶体管 描述 HMBT4403是专为一般用途的应用，要求高的击穿电压 |
