MCH5812 complex FET MOSFET+schottky diode 20V 2A 1A 0.3V SOT-353/SC70-5/MCPH5 marking GN low on-resistance/ultra high-speed switch/short reverse recovery time/low forward voltage|Welcome to Eric Online Store - Shenzhen ERIC Electronics Co., Ltd.

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MCH5812 complex FET MOSFET+schottky diode 20V 2A 1A 0.3V SOT-353/SC70-5/MCPH5 marking GN low on-resistance/ultra high-speed switch/short reverse recovery time/low forward voltage

Model：MCH5812
Mark / screen / code / typing：GN
Manufacturer：
Date Code：06+NOPB 05+ROHS
Package：SOT-353/SC70-5/MCPH5
Standard Package：3000
Min Order：10

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Product description

最大源漏极电压Vds Drain-Source Voltage	N沟道 N-Channel
最大栅源极电压Vgs(±) Gate-Source Voltage	20V
最大漏极电流Id Drain Current	12V
源漏极导通电阻Rds Drain-Source On-State Resistance	2A
开启电压Vgs（th） Gate-Source Threshold Voltage	165mΩ@ VGS =4V, ID =1A
耗散功率Pd Power Dissipation	0.4~1.3V
Description & Applications	肖特基二极管SBD Schottky Barrier Diodes
描述与应用	15V

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