Scavenging browsing Mobile
Hot Search： SSM3K35MFV SSM3J36MFV 2SK3376TT-B
MCH6702 Complex Bipolar Transistor+doides -1.5A 30V SOT-363 marking PB
| 三极管BJT类型 TYPE | PNP |
| 三极管BJT集电极-基极反向击穿电压V(BR)CBO Collector-Base Voltage(VCBO) | -15V |
| 三极管BJT集电极-发射极反向击穿电压V(BR)CEO Collector-Emitter Voltage(VCEO) | -15V |
| 三极管BJT集电极连续输出电流IC Collector Current(IC) | -1.5A |
| 三极管BJT截止频率fT Transtion Frequency(fT) | 350MHz |
| 三极管BJT直流电流增益hFE DC Current Gain(hFE) | -100mA |
| 三极管BJT管压降VCE（sat） Collector-Emitter Saturation Voltage | -120~-180mV |
| 二极管DIODE类型 TYPE | 肖特基-单管 SBD-Single |
| 二极管DIODE反向电压VR Reverse Voltage | 30V |
| 二极管DIODE正向整流电流Io Rectified Current | 700mA |
| 二极管DIODE正向电压降VF Forward Voltage(Vf) | 500mV |
| 耗散功率Pc Power Dissipation | 1W |
| Description & Applications | Features • TR : PNP Epitaxial Planar Silicon Transistor SBD : Schottky Barrier Diode • DC/DC Converter Applications • Composite type with a PNP transistor and a Schottky barrier diode contained in one package facilitatiing high-density mounting. • The MCH6702 consists of two chips which are equivaient to the MCH6101 and SBS006, respectively. • The ultrasmall package facilitates miniaturization in end products. (mounting height 0.85mm). |
| 描述与应用 | 特点 •TR：PNP平面外延硅晶体管 SBD：肖特基二极管 •DC / DC转换器应用 •复合型包含在一个与一个PNP晶体管和一个肖特基势垒二极管包facilitatiing高密度安装。 •MCH6702由两个芯片是相同于MCH6101和SBS006，分别。 •超小型封装有利于在终端产品的小型化。 （安装高度0.85毫米）。 |
