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MGSF3433VT1 MOSFET P-Channel -20V -5.6A 34mohm SOT-163 marking 3T

Price (excluding freight):
Batches(PCS):
$0.180
≤99
$0.162
≤499
$0.135
≤999
$0.117
≤2999
$0.108
FCL

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Product description
最大源漏极电压Vds
Drain-Source Voltage
-20V
最大栅源极电压Vgs(±)
Gate-Source Voltage
8V
最大漏极电流Id
Drain Current
-5.6A
源漏极导通电阻Rds
Drain-Source On-State
Resistance
34mΩ@ VGS = -4.5V, ID = -5.6A
开启电压Vgs(th)
Gate-Source Threshold Voltage
-0.45V~-0.85V
耗散功率Pd
Power Dissipation
2W
Description & ApplicationsP-Channel 1.8-V (G-S) MOSFET
描述与应用P沟道1.8-V(G-S)的MOSFET
List of related models

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