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MIC94051YM4TR MOSFET P-Channel -6V 1.8A 0.125ohm SOT-143 marking P51 low on-resistance

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Product description
最大源漏极电压Vds
Drain-Source Voltage
-6V
最大栅源极电压Vgs(±)
Gate-Source Voltage
-6V
最大漏极电流Id
Drain Current
-1.8A
源漏极导通电阻Rds
Drain-Source On-State
Resistance
0.125 @-100mA,-4.5V
开启电压Vgs(th)
Gate-Source Threshold Voltage
0.5-1.2V
耗散功率Pd
Power Dissipation
568mW/0.568W
Description & ApplicationsFeatures • 0.125Ω typical on-resistance at 4.5V gate-to-source voltage • Operates with 1.8V gate-to-source voltage • Separate substrate connection allows reverse-blocking
描述与应用•0.125Ω的导通电阻的典型 在4.5V栅极至源极电压 •使用1.8V的栅 - 源电压 •独立的基板连接允许反向阻断
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