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MJD2955 PNP transistors（BJT） -70V -10A 2MHz 20~100 -1.1V SOT-223/TO-261AA marking R2N general amplifier/low speed switch
| 集电极-基极反向击穿电压V(BR)CBO Collector-Base Voltage(VCBO) | -70V |
| 集电极-发射极反向击穿电压V(BR)CEO Collector-Emitter Voltage(VCEO) | −60V |
| 集电极连续输出电流IC Collector Current(IC) | −10A |
| 截止频率fT Transtion Frequency(fT) | 2MHz |
| 直流电流增益hFE DC Current Gain(hFE) | 20~100 |
| 管压降VCE（sat） Collector-Emitter SaturationVoltage | -1.1V |
| 耗散功率Pc PoWer Dissipation | 1.75W |
| Description & Applications | PNP epitaxial planar transistor DPAK For Surface Mount Applications Designed for general purpose amplifier and low speed switching applications. • Lead Formed for Surface Mount Applications in Plastic Sleeves • Straight Lead Version in Plastic Sleeves • Lead Formed Version Available in 16 mm Tape and Reel • Electrically Similar to MJE2955 and MJE3055 • DC Current Gain Specified to 10 Amperes • High Current Gain–Bandwidth Product |
| 描述与应用 | PNP外延平面晶体管 DPAK表面贴装应用 专为通用放大器和低速开关应用。 •铅形成表面贴装塑料套中的应用 •直引线型塑料套 •铅形成版本在16毫米编带和卷轴 •电类似MJE2955和MJE3055 •指定至10安培的直流电流增益 •高电流增益带宽积 |
