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MMBF2202PT1G MOSFET P-Channel 20V 300mA/0.3A 1.5ohm SOT-323 marking P3 low on-resistance high efficiency
| 最大源漏极电压Vds Drain-Source Voltage | -20V |
| 最大栅源极电压Vgs(±) Gate-Source Voltage | 20V |
| 最大漏极电流Id Drain Current | -0.3A |
| 源漏极导通电阻Rds Drain-Source On-State Resistance | 1.5Ω @200mA,10V |
| 开启电压Vgs（th） Gate-Source Threshold Voltage | 1.0-2.4V |
| 耗散功率Pd Power Dissipation | 150mW/0.15W |
| Description & Applications | Features • Low RDS(on) Provides Higher Efficiency and Extends Battery Life • Miniature SC−70/SOT−323 Surface Mount Package Saves Board Space • Pb−Free Package is Available |
| 描述与应用 | •低的RDS（on） 提供更高的效率和延长电池寿命 •微型SC-70/SOT-323表面贴装封装的节省电路板空间 •无铅包装是可用 |
