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MMBT100 NPN Transistors(BJT) 75V 500mA/0.5A 250Mhz 100~600 200mV~400mV SOT-23/SC-59 marking N1 general amplifier
集电极-基极反向击穿电压V(BR)CBO Collector-Base Voltage(VCBO) | 75V |
集电极-发射极反向击穿电压V(BR)CEO Collector-Emitter Voltage(VCEO) | 45V |
集电极连续输出电流IC Collector Current(IC) | 500mA/0.5A |
截止频率fT Transtion Frequency(fT) | 250Mhz |
直流电流增益hFE DC Current Gain(hFE) | 100~600 |
管压降VCE(sat) Collector-Emitter Saturation Voltage | 200mV~400mV |
耗散功率Pc Power Dissipation | 350mW/0.35W |
Description & Applications | • This device is designed for general purpose amplifier applications at collector currents to 300mA. • Sourced from process 10. |
描述与应用 | •本设备是专为通用放大器 应用在集电极电流300mA的电流。 |