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MMBT100 NPN Transistors(BJT) 75V 500mA/0.5A 250Mhz 100~600 200mV~400mV SOT-23/SC-59 marking N1 general amplifier

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Product description
集电极-基极反向击穿电压V(BR)CBO
Collector-Base Voltage(VCBO)
75V
集电极-发射极反向击穿电压V(BR)CEO
Collector-Emitter Voltage(VCEO)
45V
集电极连续输出电流IC
Collector Current(IC)
500mA/0.5A
截止频率fT
Transtion Frequency(fT)
250Mhz
直流电流增益hFE
DC Current Gain(hFE)
100~600
管压降VCE(sat)
Collector-Emitter Saturation Voltage
200mV~400mV
耗散功率Pc
Power Dissipation
350mW/0.35W
Description & Applications• This device is designed for general purpose amplifier applications at collector currents to 300mA. • Sourced from process 10.
描述与应用•本设备是专为通用放大器 应用在集电极电流300mA的电流。
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