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MMBTA06LT1 NPN Transistors(BJT) 80V 500mA/0.5A 100Mhz 100 SOT-23/SC-59 marking 1GM

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Product description
集电极-基极反向击穿电压V(BR)CBO
Collector-Base Voltage(VCBO)
80V
集电极-发射极反向击穿电压V(BR)CEO
Collector-Emitter Voltage(VCEO)
80V
集电极连续输出电流IC
Collector Current(IC)
500mA/0.5A
截止频率fT
Transtion Frequency(fT)
100Mhz
直流电流增益hFE
DC Current Gain(hFE)
100
管压降VCE(sat)
Collector-Emitter Saturation Voltage
耗散功率Pc
Power Dissipation
225mW/0.225W
Description & ApplicationsDriver Transistors We declare that the material of product compliance with RoHS requirements.
描述与应用驱动晶体管 我们声明,对产品材料 符合RoHS要求。
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