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MMBTA06LT1 NPN Transistors(BJT) 80V 500mA/0.5A 100Mhz 100 SOT-23/SC-59 marking 1GM
集电极-基极反向击穿电压V(BR)CBO Collector-Base Voltage(VCBO) | 80V |
集电极-发射极反向击穿电压V(BR)CEO Collector-Emitter Voltage(VCEO) | 80V |
集电极连续输出电流IC Collector Current(IC) | 500mA/0.5A |
截止频率fT Transtion Frequency(fT) | 100Mhz |
直流电流增益hFE DC Current Gain(hFE) | 100 |
管压降VCE(sat) Collector-Emitter Saturation Voltage | |
耗散功率Pc Power Dissipation | 225mW/0.225W |
Description & Applications | Driver Transistors We declare that the material of product compliance with RoHS requirements. |
描述与应用 | 驱动晶体管 我们声明,对产品材料 符合RoHS要求。 |