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MMBTA64 PNP transistors（BJT） -30V -1.2A 125MHz 20000 -1.5V SOT-23/SC-59 marking 2V
| 集电极-基极反向击穿电压V(BR)CBO Collector-Base Voltage(VCBO) | -30V |
| 集电极-发射极反向击穿电压V(BR)CEO Collector-Emitter Voltage(VCEO) | −30V |
| 集电极连续输出电流IC Collector Current(IC) | -1.2A |
| 截止频率fT Transtion Frequency(fT) | 125MHz |
| 直流电流增益hFE DC Current Gain(hFE) | 20000 |
| 管压降VCE（sat） Collector-Emitter SaturationVoltage | -1.5V |
| 耗散功率Pc PoWer Dissipation | 350mW/0.35W |
| Description & Applications | PNP Darlington Transistor This device is designed for applications requiring extremely high current gain at currents to 800 mA. |
| 描述与应用 | PNP达林顿晶体管 该设备是专为要求极高的电流为800毫安的电流增益的应用而设计。 |
