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MMST4126 PNP transistors（BJT） -25V -200mA/-0.2A 400MHz 120~360 -400mV/-0.4V SOT-23/SMT3 marking RVZ
| 集电极-基极反向击穿电压V(BR)CBO Collector-Base Voltage(VCBO) | -25V |
| 集电极-发射极反向击穿电压V(BR)CEO Collector-Emitter Voltage(VCEO) | −25V |
| 集电极连续输出电流IC Collector Current(IC) | −200mA/-0.2A |
| 截止频率fT Transtion Frequency(fT) | 400MHz |
| 直流电流增益hFE DC Current Gain(hFE) | 120~360 |
| 管压降VCE（sat） Collector-Emitter SaturationVoltage | -400mV/-0.4V |
| 耗散功率Pc PoWer Dissipation | 200mW/0.2W |
| Description & Applications | PNP silicon transistor |
| 描述与应用 | PNP硅晶体管 |
