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MPL1 Complex Bipolar Transistor+doides -100mA 25V SOT-89 marking L01
| 三极管BJT类型 TYPE | PNP |
| 三极管BJT集电极-基极反向击穿电压V(BR)CBO Collector-Base Voltage(VCBO) | |
| 三极管BJT集电极-发射极反向击穿电压V(BR)CEO Collector-Emitter Voltage(VCEO) | -20V |
| 三极管BJT集电极连续输出电流IC Collector Current(IC) | -100mA |
| 三极管BJT截止频率fT Transtion Frequency(fT) | |
| 三极管BJT直流电流增益hFE DC Current Gain(hFE) | |
| 三极管BJT管压降VCE（sat） Collector-Emitter Saturation Voltage | -2V |
| 二极管DIODE类型 TYPE | 肖特基-单管 SBD-Single |
| 二极管DIODE反向电压VR Reverse Voltage | 25V |
| 二极管DIODE正向整流电流Io Rectified Current | 500mA |
| 二极管DIODE正向电压降VF Forward Voltage(Vf) | |
| 耗散功率Pc Power Dissipation | 500mW |
| Description & Applications | Features • contains Schotty barrier diode and transistor configured as DC/DC conveter to reduce mounting and assembly and component costs |
| 描述与应用 | 特点 •包含如DC / DC变频式配置，以减少安装和装配和组件成本的肖特基势垒二极管和晶体管 |
