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MRF9811T1 MESFET-N channel 15V 350mA SOT-143 marking 23K RF application
| 最大源漏极电压Vds Drain-Source Voltage | 15V |
| 栅源极击穿电压V(BR)GS Gate-Source Voltage | -5V |
| 漏极电流(Vgs=0V)IDSS Drain Current | 350mA |
| 关断电压Vgs(off) Gate-Source Cut-off Voltage | |
| 耗散功率Pd Power Dissipation | 770mW/0.77W |
| Description & Applications | The RF Small Signal Line N–Channel Depletion–Mode MESFET Description Designed for use in driver stages of moderate power RF amplifiers to 2 GHz. Typical applications are cellular radios and personal communication .transmitters such as AMPS, ETACS, NMT, GSM, PCN, JDC and DECT Feature Performance Specifications at 900 MHz, 5.8 V Output Power = 21 dBm Power Gain = 14 dB Drain Efficiency = 55% Plastic Surface Mount Package Order MRF9811T1 for Tape and Reel Packaging |
| 描述与应用 | RF小信号线 N沟道耗尽型MESFET 描述 专为中等功率RF放大器至2 GHz的驱动级使用。典型的应用是蜂窝无线电发射器如AMPS，ETACS，NMT，GSM，PCN，JDC和DECT和个人通信。 特点 性能规格在900 MHz，5.8 V时 输出功率= 21 dBm 功率增益= 14dB 漏极效率=55％ 塑料表面贴装封装 |
