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MSB92T1 PNP transistors（BJT） -300V -500mA/-0.5A 50MHz 40 -500mV/-0.5V SOT-23/SC-59 marking 2D general amplifier
| 集电极-基极反向击穿电压V(BR)CBO Collector-Base Voltage(VCBO) | -300V |
| 集电极-发射极反向击穿电压V(BR)CEO Collector-Emitter Voltage(VCEO) | −300V |
| 集电极连续输出电流IC Collector Current(IC) | −500mA/-0.5A |
| 截止频率fT Transtion Frequency(fT) | 50MHz |
| 直流电流增益hFE DC Current Gain(hFE) | 40 |
| 管压降VCE（sat） Collector-Emitter SaturationVoltage | −500mV/-0.5V |
| 耗散功率Pc PoWer Dissipation | 150mW/0.15W |
| Description & Applications | PNP Silicon General Purpose High Voltage Transistor This PNP Silicon Planar Transistor is designed for general purpose amplifier applications. Features These Devices are Pb Free |
| 描述与应用 | PNP硅通用高电压晶体管 这PNP硅平面晶体管是专为通用放大器应用。 特点 这些器件是无铅 |
