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MSG36D42Z1AL NPN+NPN Complex Bipolar Transistor 9V 100mA/60mA 14GHZ / 19GHZ HEF=100~220 SOT-563 marking 6E switch and digital circuit application
|
V(BR) CBO Collector-Base Voltage |
9V / 9V |
|
V(BR) CEO Collector-Emitter Voltage |
6V / 6V |
| Collector Current(IC) | 100MA / 60MA |
| Transtion Frequency(fT) | 14GHZ / 19GHZ |
| DC Current Gain(hFE) | 100~220 / 100~220 |
|
VCE (sat) Collector-Emitter Saturation Voltage |
|
| Power Dissipation （Pd） | 0.125W |
| Description & Applications |
SiGe HBT type
For low-noise RF amplifi er
Features Features
* Compatible between high breakdown voltage and high cutoff frequency
* Low-noise, high-gain amplification
*Two elements incorporated into one package (Each transistor is separated) Two elements incorporated into one packag
* SSSMini type package, reduction of the mounting area and assembly cost
* Basic Part Number Basic Part Number
MSG330D4 ++ MSG33002
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| Technical Documentation Download | Read Online |
