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MTM231230L MOSFET P-Channel -20V -3A 0.04ohm SOT-323 marking BL low voltage drive low on-resistance
| 最大源漏极电压Vds Drain-Source Voltage | -20V |
| 最大栅源极电压Vgs(±) Gate-Source Voltage | 10V |
| 最大漏极电流Id Drain Current | -3A |
| 源漏极导通电阻Rds Drain-Source On-State Resistance | 0.04Ω @-1A,-4V |
| 开启电压Vgs（th） Gate-Source Threshold Voltage | -0.4--1.3V |
| 耗散功率Pd Power Dissipation | 500mW/0.5W |
| Description & Applications | Features Low voltage drive (1.8 V, 2.5 V, 4 V) Realization of low on-resistance, using extremely fine process Contributes to miniaturization of sets, reduction of component count. Eco-friendly Halogen-free package |
| 描述与应用 | 低电压驱动（1.8 V，2.5 V，4 V） 实现低导通电阻，用极其精细的过程 集小型化，减少元件数量。 环保无卤素封装 |
