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MUN2212T1 NPN Bipolar Digital Transistor (BRT) 50V 100mA/0.1A 22k 22k gain60-100 SOT-23/SC-59 marking 8B ESD protection
| 集电极-基极反向击穿电压V(BR)CBO Collector-Base Voltage(VCBO) | 50V |
| 集电极-发射极反向击穿电压V(BR)CEO Collector-Emitter Voltage(VCEO) | 50V |
| 集电极连续输出电流IC Collector Current(IC) | 100mA/0.1A |
| 基极输入电阻R1 Input Resistance(R1) | 22KΩ/Ohm |
| 基极-发射极输入电阻R2 Base-Emitter Resistance(R2) | 22KΩ/Ohm |
| 电阻比(R1/R2) Resistance Ratio | 1 |
| 直流电流增益hFE DC Current Gain(hFE) | 60-100 |
| 截止频率fT Transtion Frequency(fT) | |
| 耗散功率Pc Power Dissipation | 0.23W/230mW |
| Description & Applications | Features •Simplifies Circuit Design •Reduces Board Space •Reduces Component Count •Moisture Sensitivity Level: 1 •ESD Rating - Human Body Model: Class 1 - Machine Model: Class B •The SC-59 Package can be Soldered Using Wave or Reflow •The Modified Gull-Winged Leads Absorb Thermal Stress During Soldering Eliminating the Possibility of Damage to the Die •Pb-Free Packages are Available |
| 描述与应用 | 特性 •简化电路设计 •缩小板级空间 •减少元件数量 •湿度敏感度等级：1 •ESD额定值 - 人体模型：第1类 - 机器型号：B类 •SC-59封装，可以使用波或回流焊接 •改进的鸥翼引线在焊接热应力吸收消除模具损坏的可能性 •无铅包可用 |
