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MUN5213T1 NPN Bipolar Digital Transistor (BRT) 50V 100mA/0.1A 47k 47k gain80-140 SOT-323/SC-70 marking 8C
| 集电极-基极反向击穿电压V(BR)CBO Collector-Base Voltage(VCBO) | 50V |
| 集电极-发射极反向击穿电压V(BR)CEO Collector-Emitter Voltage(VCEO) | 50V |
| 集电极连续输出电流IC Collector Current(IC) | 100mA/0.1A |
| 基极输入电阻R1 Input Resistance(R1) | 47KΩ/Ohm |
| 基极-发射极输入电阻R2 Base-Emitter Resistance(R2) | 47KΩ/Ohm |
| 电阻比(R1/R2) Resistance Ratio | 1 |
| 直流电流增益hFE DC Current Gain(hFE) | 80-140 |
| 截止频率fT Transtion Frequency(fT) | |
| 耗散功率Pc Power Dissipation | 0.3W/300mW |
| Description & Applications | Features NPN Silicon Surface Mount Transistor with Monolithic Bias Resistor Network • Simplifies Circuit Design • Reduces Board Space • Reduces Component Count • The SC−70/SOT−323 package can be soldered using wave or reflow. The modified gull−winged leads absorb thermal stress during soldering eliminating the possibility of damage to the die. • Available in 8 mm embossed tape and reel. Use the Device Number to order the 7 inch/3000 unit reel. • Pb−Free Packages are Available |
| 描述与应用 | 特性 NPN硅表面贴装晶体管 具有单片偏置电阻网络 •简化电路设计 •缩小板级空间 •减少元件数量 •SC-70/SOT-323包装可以使用波或回流焊接。 修改后的鸥翅引线过程中吸收热应力 除焊接的模具损坏的可能性。 •可于8 mm压纹带和卷轴。使用设备号编排7 inch/3000的单位卷轴。 •无铅包可用 |
