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NDS336P MOSFET P-Channel -30V 0.9A 0.45ohm SOT-23 marking 336

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Product description
最大源漏极电压Vds
Drain-Source Voltage
-30V
最大栅源极电压Vgs(±)
Gate-Source Voltage
20V
最大漏极电流Id
Drain Current
-900mA/-0.9A
源漏极导通电阻Rds
Drain-Source On-State
Resistance
0.45Ω @-900mA,-4.5V
开启电压Vgs(th)
Gate-Source Threshold Voltage
-0.8--2.5V
耗散功率Pd
Power Dissipation
500mW/0.5W
Description & Applicationsndustry standard outline SOT-23 surface mount package using proprietary SuperSOT TM-3 design for superior thermal and electrical capabilities. High density cell design for extremely low RDS(ON) Exceptional on-resistance and maximum DC current capability.
描述与应用不能忽视标准外形SOT-23表面贴装封装 使用专有SuperSOT TM-3的设计卓越的热性能和电气性能。 高密度电池设计极低的RDS(ON) 卓越的导通电阻和最大DC电流能力
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