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NESG2101M05 NPN Transistors(BJT) 13V 100mA/0.1A 14Mhz~17Mhz 130~260 SOT-343 marking TI high frequency transistor

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Product description
集电极-基极反向击穿电压V(BR)CBO
Collector-Base Voltage(VCBO)
13V
集电极-发射极反向击穿电压V(BR)CEO
Collector-Emitter Voltage(VCEO)
5V
集电极连续输出电流IC
Collector Current(IC)
100mA/0.1A
截止频率fT
Transtion Frequency(fT)
14Mhz~17Mhz
直流电流增益hFE
DC Current Gain(hFE)
130~260
管压降VCE(sat)
Collector-Emitter Saturation Voltage
耗散功率Pc
Power Dissipation
500mW/0.5W
Description & Applications•NEC's NPN SiGe HIGH FREQUENCY TRANSISTOR HIGH BREAKDOWN VOLTAGE SiGe TECHNOLOGY VCEO = 5 V (Absolute Maximum) • HIGH OUTPUT POWER: P1dB = 21 dBm at 2 GHz • LOW NOISE FIGURE: NF = 0.9 dBm at 2 GHz • HIGH MAXIMUM STABLE POWER GAIN: MSG = 17 dB at 2 GHz • LOW PROFILE M05 PACKAGE: SOT-343 footprint, with a height of only 0.59 mm Flat lead style for better RF performance
描述与应用•NEC的NPN硅锗高频三极管 高击穿电压的SiGe技术      VCEO= 5 V(绝对最大值) •高输出功率:      的P1dB=21 dBm的在2 GHz •低噪声系数:     NF= 0.9 dBm的在2 GHz •最大稳定功率增益:      味精= 17分贝在2 GHz •超薄M05包装:      SOT-343的足迹,与仅为0.59毫米的高度     单位领导风格更好RF性能
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