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NSL12AWT1 PNP transistors（BJT） -12V -2A 100MHz 100~300 -290mV/-0.29V SOT-363/SC-88 marking 11X high current/high power
| 集电极-基极反向击穿电压V(BR)CBO Collector-Base Voltage(VCBO) | -12V |
| 集电极-发射极反向击穿电压V(BR)CEO Collector-Emitter Voltage(VCEO) | -12V |
| 集电极连续输出电流IC Collector Current(IC) | -2A |
| 截止频率fT Transtion Frequency(fT) | 100MHz |
| 直流电流增益hFE DC Current Gain(hFE) | 100~300 |
| 管压降VCE（sat） Collector-Emitter SaturationVoltage | -290mV/-0.29V |
| 耗散功率Pc PoWer Dissipation | 450mW/0.45W |
| Description & Applications | High Current Surface Mount PNP Silicon Transistor for Battery Operated Applications Features: • High Current Capability • High Power Handling • Low VCE(s) • Small Size |
| 描述与应用 | PNP硅晶体管适合电池供电应用 特点： •高电流能力 •高功率处理 •低VCE（S） •小尺寸 |
