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NTF2955T1 MOSFET P-Channel -60V -2.6A 0.145ohm SOT-223 marking 2955 low on-resistance high avalanche
| 最大源漏极电压Vds Drain-Source Voltage | -60V |
| 最大栅源极电压Vgs(±) Gate-Source Voltage | 20V |
| 最大漏极电流Id Drain Current | -2.6A |
| 源漏极导通电阻Rds Drain-Source On-State Resistance | 0.145Ω @-750mA,-10V |
| 开启电压Vgs（th） Gate-Source Threshold Voltage | -2.0--4.0V |
| 耗散功率Pd Power Dissipation | 2.8W |
| Description & Applications | Features • TMOS7 Design for low RDS(on) • Withstands High Energy in Avalanche and Commutation Modes |
| 描述与应用 | •TMOS7设计低RDS（on） •可承受高能量雪崩和减刑模式 |
