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P0903BDG MOSFET N-Channel 20V 50A TO-252/D-PAK marking P0903BDG fast switch/low drive

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Product description
最大源漏极电压Vds Drain-Source Voltage20V
最大栅源极电压Vgs(±) Gate-Source Voltage
最大漏极电流Id Drain Current50A
源漏极导通电阻ΩRds DΩ/Ohmain-SouΩ/Ohmce On-State Ω/Ohmesistance7.5Ω/Ohm @25A,10V
开启电压Vgs(th) Gate-Source Threshold Voltage1-3V
耗散功率Pd Power Dissipation50W
Description & ApplicationsN-Channel Logic Level Enhancement Mode Field Effect Transistor
描述与应用N沟道逻辑电平增强 模式场效应晶体管
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