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PDTC115EE NPN Bipolar Digital Transistor (BRT) 50V 100mA/0.1A 100k 100k gain80 SOT-523 marking 46

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Product description
集电极-基极反向击穿电压V(BR)CBO Collector-Base Voltage(VCBO)50V
集电极-发射极反向击穿电压V(BR)CEO Collector-Emitter Voltage(VCEO)50V
集电极连续输出电流IC Collector Current(IC)100mA/0.1A
基极输入电阻R1 Input Resistance(R1)100KΩ/Ohm
基极-发射极输入电阻R2 Base-Emitter Resistance(R2)100KΩ/Ohm
电阻比(R1/R2) Resistance Ratio1
直流电流增益hFE DC Current Gain(hFE)80
截止频率fT Transtion Frequency(fT)
耗散功率Pc Power Dissipation0.15W/150mW
Description & ApplicationsFEATURES • Built-in bias resistors • Simplified circuit design • Reduction of component count • Reduced pick and place costs.
描述与应用特性 •内置偏置电阻 •简化电路设计 •减少元件数量 •减少取放成本
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