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PUMB3 PNP+PNP Complex Bipolar Digital Transistor -50V -0.1A R1=4.7KΩ HEF=200 0.2W SOT363 marking B5 switching inverting interface driver circuit
|
V(BR) CBO Collector-Base Voltage |
-50V |
|
V(BR) CEO Collector-Emitter Voltage |
-50V |
| Collector Current(IC) | -100MA/-0.1A |
| Input Resistance(R1) | 4.7KΩ |
| Base-Emitter Resistance(R2) | |
| Base-Emitter Input Resistance Ratio (R1/R2) | |
| DC Current Gain(hFE) | 200 |
| Transtion Frequency(fT) | 250MHZ |
| Power Dissipation （Pd） | 200MW/0.2W |
| Description & Applications | PNP/PNP resistor-equipped transistors;
R1 = 4.7 kΩ, R2 = open
• Built-in bias resistors
• Simplified circuit design
• Reduction of component count
• Reduced pick and place costs.
• Low current peripheral drivers
• Replacement of general purpose transistors in digital
applications
• Control of IC inputs.
|
| Technical Documentation Download | Read Online |
