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QS6M3 Complex FET 30V/-20V 1.5A/-1.5A SOT-163/SOT23-6/TSMT6 marking M03 power switch DC/DC converter
| 最大源漏极电压Vds Drain-Source Voltage | 30V/-20V |
| 最大栅源极电压Vgs(±) Gate-Source Voltage | 12V/12V |
| 最大漏极电流Id Drain Current | 1.5A/-1.5A |
| 源漏极导通电阻Rds Drain-Source On-State Resistance | 360mΩ@ VGS =2.5V, ID =1A/430mΩ@ VGS =-2.5V, ID =-0.75A |
| 开启电压Vgs（th） Gate-Source Threshold Voltage | 0.5~1.5V/-0.7~-2V |
| 耗散功率Pd Power Dissipation | 1.25W |
| Description & Applications | Small switching Features Low on-resistance. Built-in G-S Protection Diode. Small and Surface Mount Package (TSMT6). Application Power switching, DC / DC converter. |
| 描述与应用 | 小开关 特点 低导通电阻。 内置G-S的保护二极管。 小和表面贴装封装（TSMT6）。 应用 电源开关，DC / DC变换器。 |
