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RFD3055LESM MOSFET N-Channel 60v 11A TO-252/D-PAK marking F3055L fast switch/DC/DC/very low RDS
| 最大源漏极电压Vds Drain-Source Voltage | 60v |
| 最大栅源极电压Vgs(±) Gate-Source Voltage | 16v |
| 最大漏极电流Id Drain Current | 11A |
| 源漏极导通电阻ΩRds DΩ/Ohmain-SouΩ/Ohmce On-State Ω/Ohmesistance | 0.107Ω/Ohm @8A,5V |
| 开启电压Vgs（th） Gate-Source Threshold Voltage | 1-3V |
| 耗散功率Pd Power Dissipation | 38W |
| Description & Applications | 11A, 60V, 0.107 Ohm, Logic Level, N-Channel Power MOSFETs These N-Channel enhancement-mode power MOSFETs are manufactured using the latest manufacturing process technology. This process, which uses feature sizes approaching those of LSI circuits, gives optimum utilization of silicon, resulting in outstanding performance. They were designed for use in applications such as switching regulators, switching converters, motor drivers and relay drivers. These transistors can be operated directly from integrated circuits. Features • 11A, 60V • rDS(ON) = 0.107Ω • Temperature Compensating PSPICE Model • Peak Current vs Pulse Width Curve • UIS Rating Curve • Related Literature TB334 “Guidelines for Soldering Surface Mount Components to PC Boards |
| 描述与应用 | 11A，60V，0.107欧姆，逻辑电平， N沟道功率MOSFET 这些N沟道增强型功率MOSFET 采用最新的制造工艺制造 技术。这个过程中，它使用特征尺寸 接近那些LSI电路，提供了最佳的利用 硅，产生的优秀性能。他们 设计用于在应用，如开关 稳压器，开关转换器，电机驱动器和继电器 驱动程序。这些晶体管可以工作直接从集成电路 •温度补偿的PSPICE模型 •峰值电流与脉冲宽度曲线 •UIS等级曲线 •相关文献 TB334“指南焊锡表面装载 组件到PC板 |
