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RK7002 MOSFET N-Channel 60V 115mA/0.115A SOT-23/SC-59 marking RKM low RDS/ gate charge
| 最大源漏极电压Vds Drain-Source Voltage | 60V |
| 最大栅源极电压Vgs(±) Gate-Source Voltage | 20V |
| 最大漏极电流Id Drain Current | 115mA/0.115A |
| 源漏极导通电阻ΩRds DΩ/Ohmain-SouΩ/Ohmce On-State Ω/Ohmesistance | 7.5Ω/Ohm @500mA,10V |
| 开启电压Vgs（th） Gate-Source Threshold Voltage | 1.0-2.5V |
| 耗散功率Pd Power Dissipation | 225mW/0.225W |
| Description & Applications | Interface and switching (60V, 115mA) Silicon N-channel MOSFET Features Low on-resistance. Fast switching speed. Wide SOA (safe operating area). Low-voltage drive. Easily designed drive circuits. Easy to use in parallel. |
| 描述与应用 | 接口和开关（60V，115毫安） 硅N沟道MOSFET 低导通电阻。 开关速度快。 宽安全工作区（SOA） 低电压驱动。 轻松驱动电路设计。 易于并联使用 |
