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RN1111FS NPN Bipolar Digital Transistor (BRT) 20V 50mA 10k gain300 FSM marking XM switch inverting circuit interface circuit and driver circuit
| 集电极-基极反向击穿电压V(BR)CBO Collector-Base Voltage(VCBO) | 20V |
| 集电极-发射极反向击穿电压V(BR)CEO Collector-Emitter Voltage(VCEO) | 20V |
| 集电极连续输出电流IC Collector Current(IC) | 50mA |
| 基极输入电阻R1 Input Resistance(R1) | 10KΩ/Ohm |
| 基极-发射极输入电阻R2 Base-Emitter Resistance(R2) | |
| 电阻比(R1/R2) Resistance Ratio | |
| 直流电流增益hFE DC Current Gain(hFE) | 300 |
| 截止频率fT Transtion Frequency(fT) | |
| 耗散功率Pc Power Dissipation | 0.05W/50mW |
| Description & Applications | Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications •Incorporating a bias resistor into a transistor reduces parts count. Reducing the parts count enables the manufacture of ever more compact equipment and lowers assembly cost. • Complementary to RN2110FS, RN2111FS |
| 描述与应用 | 开关，逆变电路，接口电路， 驱动器电路应用 •将偏置电阻晶体管，减少了部件数量 减少部件数量，能够制造更加 紧凑的设备和降低装配成本。 •互补RN2110FS，RN2111FS |
