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RN1441-A NPN Bipolar Digital Transistor (BRT) 50V 300mA/0.3A 5.6k SOT-23/SC-59/S-Mini marking KA muting and switch

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Product description
集电极-基极反向击穿电压V(BR)CBO Collector-Base Voltage(VCBO)50V
集电极-发射极反向击穿电压V(BR)CEO Collector-Emitter Voltage(VCEO)20V
集电极连续输出电流IC Collector Current(IC)300mA/0.3A
基极输入电阻R1 Input Resistance(R1)5.6KΩ/Ohm
基极-发射极输入电阻R2 Base-Emitter Resistance(R2)
电阻比(R1/R2) Resistance Ratio
直流电流增益hFE DC Current Gain(hFE)200
截止频率fT Transtion Frequency(fT)30MHz
耗散功率Pc Power Dissipation0.2W/200mW
Description & ApplicationsMuting and Switching Applications High emitter-base voltage: VEBO = 25V (min) High reverse hFE: reverse hFE = 150 (typ.) (VCE = −2V, IC = −4mA) Low on resistance: RON = 1Ω (typ.) (IB = 5mA) With built-in bias resistors Simplify circuit design Reduce a quantity of parts and manufacturing process
描述与应用静音和开关应用 高发射基地电压VEBO= 25V(最小值) HFE:高反向扭转HFE=150(典型值)(VCE=2V,IC=4毫安) 低电阻:RON=1Ω(典型值)(IB=5毫安) 借助内置的偏置电阻 简化电路设计 数量减少了零件和制造工艺
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