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RN2105FV PNP Bipolar Digital Transistor (BRT) -50V -100mA/-0.1A 80 0.15W/150mW SOT-723/VESM marking YE switch inverter interface driver circuit

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Product description
集电极-基极反向击穿电压V(BR)CBO Collector-Base Voltage(VCBO)-50V
集电极-发射极反向击穿电压V(BR)CEO Collector-Emitter Voltage(VCEO)-50V
集电极连续输出电流IC Collector Current(IC)-100mA/-0.1A
基极输入电阻R1 Input Resistance(R1)2.2KΩ/Ohm
基极-发射极输入电阻R2 Base-Emitter Resistance(R2)47KΩ/Ohm
电阻比(R1/R2) Resistance Ratio0.047
直流电流增益hFE DC Current Gain(hFE)80
截止频率fT Transtion Frequency(fT)200MHz
耗散功率Pc Power Dissipation0.15W/150mW
Description & ApplicationsFeatures • Transistor Silicon PNP Epitaxial Type (PCT Process) • Built-in bias resistors • Simplified circuit design • Reduced quantity of parts and manufacturing process • Complementary to RN1101FV~RN1106FV Applications • Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications
描述与应用特点 •晶体管的硅PNP外延型(PCT工艺) •内置偏置电阻 •简化电路设计 •减少数量的零件和制造工艺 •互补到RN1101FV〜RN1106FV的 应用 •开关,逆变电路,接口电路和驱动器电路应用
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