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RN2422 PNP Bipolar Digital Transistor (BRT) -50V -800mA/0.8A 65 0.2W/200mW SOT-23/SC-59 marking RB switch inverter interface driver circuit

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Product description
集电极-基极反向击穿电压V(BR)CBO Collector-Base Voltage(VCBO)-50V
集电极-发射极反向击穿电压V(BR)CEO Collector-Emitter Voltage(VCEO)-50V
集电极连续输出电流IC Collector Current(IC)-800mA/0.8A
基极输入电阻R1 Input Resistance(R1)2.2KΩ/Ohm
基极-发射极输入电阻R2 Base-Emitter Resistance(R2)2.2KΩ/Ohm
电阻比(R1/R2) Resistance Ratio1
直流电流增益hFE DC Current Gain(hFE)65
截止频率fT Transtion Frequency(fT)200MHz
耗散功率Pc Power Dissipation0.2W/200mW
Description & ApplicationsFeatures •Transistor Silicon PNP Epitaxial Type (PCT Process) •High current type (IC(MAX) = −800mA) •With built-in bias resistors •Simplify circuit design •Reduce a quantity of parts and manufacturing process •Low VCE (sat) •Complementary to RN1421~RN1427 Applications •Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications
描述与应用特点 •PNP晶体管的硅外延型(PCT工艺) •高电流型(IC(MAX)=-800MA) •内置偏置电阻 •简化电路设计 •减少了部件数量和制造工艺 •低VCE(SAT) •互补RN1421~~ RN1427 应用 •开关,逆变电路,接口电路和驱动器电路应用
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