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RN2501 PNP+PNP Complex Bipolar Digital Transistor -50V -100mA HEF=30 300mW/0.3W R1=4.7KΩ R2=4.7KΩ SOT-153/SMV/SOT23-5 marking YA switching inverting interface driver circuit
|
V(BR) CBO Collector-Base Voltage |
-50V |
|
V(BR) CEO Collector-Emitter Voltage |
-50V |
| Collector Current(IC) | -100MA/-0.1A |
| Input Resistance(R1) | 4.7KΩ |
| Base-Emitter Resistance(R2) | 4.7 KΩ |
| Base-Emitter Input Resistance Ratio (R1/R2) | 1 |
| DC Current Gain(hFE) | 30 |
| Transtion Frequency(fT) | 200MHZ |
| Power Dissipation （Pd） | 300MW/0.3W |
| Description & Applications |
Switching, Inverter Circuit, Interface Circuit
and Driver Circuit Applications
* Including two devices in SMV (super mini type with 5 leads)
* With built-in bias resistors
* Simplify circuit design
* Reduce a quantity of parts and manufacturing process
* Complementary to RN1501 to RN1506
|
| Technical Documentation Download | Read Online |
