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RN2972HFE PNP+PNP Complex Bipolar Digital Transistor -30V -100mA HEF=300 R1=22KΩ 100mW/0.1W SOT-563/ES6 marking YY3 switching inverting interface driver circuit
|
V(BR) CBO Collector-Base Voltage |
-30V |
|
V(BR) CEO Collector-Emitter Voltage |
-30V |
| Collector Current(IC) | -100MA/-0.1A |
| Input Resistance(R1) | 22KΩ |
| Base-Emitter Resistance(R2) | |
| Base-Emitter Input Resistance Ratio (R1/R2) | |
| DC Current Gain(hFE) | 300 |
| Transtion Frequency(fT) | 200mhz |
| Power Dissipation （Pd） | 0.1w |
| Description & Applications | TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process) (Bias Resistor built-in Transistor)
Switching, Inverter Circuit, Interface Circuit and
Driver Circuit Applications
• Two devices are incorporated into an Extreme-Super-Mini (6 pin) package.
• Incorporating a bias resistor into a transistor reduces parts count.
Reducing the parts count enable the manufacture of ever more
compact equipment and save assembly cost.
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| Technical Documentation Download | Read Online |
