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RN4987 NPN+PNP Complex Bipolar Digital Transistor 50V/-50V 100mA/-100mA 80 200mW/0.2W SOT-363/US6/SC70-6 marking 6H switching inverting interface driver circuit

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Product description
集电极-基极反向击穿电压V(BR)CBO Collector-Base Voltage(VCBO)50V/-50V
集电极-发射极反向击穿电压V(BR)CEO Collector-Emitter Voltage(VCEO)50V/-50V
集电极连续输出电流IC Collector Current(IC)100mA/-100mA
Q1基极输入电阻R1 Input Resistance(R1)10KΩ/Ohm
Q1基极-发射极输入电阻R2 Base-Emitter Resistance(R2)47KΩ/Ohm
Q1电阻比(R1/R2) Q1 Resistance Ratio0.213
Q2基极输入电阻R1 Input Resistance(R1)10KΩ/Ohm
Q2基极-发射极输入电阻R2 Base-Emitter Resistance(R2)47KΩ/Ohm
Q2电阻比(R1/R2) Q2 Resistance Ratio0.213
直流电流增益hFE DC Current Gain(hFE)80
截止频率fT Transtion Frequency(fT)250MHz/200MHz
耗散功率Pc Power Dissipation200mW/0.2W
Description & ApplicationsFeatures • TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process) Silicon NPN Epitaxial Type (PCT Process) • Includeing two devices in US6 (ultra super mini type with 6 leads) • With built-in bias resistors • Simplify circuit design • Reduce a quantity of parts and manufacturing process Applications • Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications.
描述与应用特点 •东芝晶体管的硅PNP外延型硅NPN外延型(PCT工艺)(PCT工艺) •包括,两个设备US6(超超级迷你型6引线) •内置偏置电阻 •简化电路设计 •减少了部件数量和制造工艺 应用 •开关,逆变电路,接口电路和驱动器电路应用。
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