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RT1N136U-T111-1 NPN Bipolar Digital Transistor (BRT) 50V 100mA/0.1A 1k 10k SOT-523 marking NC

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Product description
集电极-基极反向击穿电压V(BR)CBO Collector-Base Voltage(VCBO)50V
集电极-发射极反向击穿电压V(BR)CEO Collector-Emitter Voltage(VCEO)50V
集电极连续输出电流IC Collector Current(IC)100mA/0.1A
基极输入电阻R1 Input Resistance(R1)1KΩ/Ohm
基极-发射极输入电阻R2 Base-Emitter Resistance(R2)10KΩ/Ohm
电阻比(R1/R2) Resistance Ratio0.1
直流电流增益hFE DC Current Gain(hFE)33
截止频率fT Transtion Frequency(fT)200MHz
耗散功率Pc Power Dissipation0.2W/200mW
Description & ApplicationsFEATURE ・Built-in bias resistor (R1=1kΩ,R2=10kΩ).
描述与应用·内置偏置电阻(R1=1kΩ的,R2=10kΩ的
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