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RT1N432C NPN Bipolar Digital Transistor (BRT) 50V 100mA/0.1A 4.7k 4.7k SOT-23/SC-59 marking
集电极-基极反向击穿电压V(BR)CBO Collector-Base Voltage(VCBO) | 50V |
集电极-发射极反向击穿电压V(BR)CEO Collector-Emitter Voltage(VCEO) | 50V |
集电极连续输出电流IC Collector Current(IC) | 100mA/0.1A |
基极输入电阻R1 Input Resistance(R1) | 4.7KΩ/Ohm |
基极-发射极输入电阻R2 Base-Emitter Resistance(R2) | 4.7KΩ/Ohm |
电阻比(R1/R2) Resistance Ratio | 1 |
直流电流增益hFE DC Current Gain(hFE) | 50 |
截止频率fT Transtion Frequency(fT) | 200MHz |
耗散功率Pc Power Dissipation | 0.2W/200mW |
Description & Applications | FEATURE ・Built-in bias resistor (R1=4.7kΩ,R2=4.7kΩ). |
描述与应用 | 内置偏置电阻(R1=4.7kΩ上,R2=4.7kΩ上) |