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RT2P09M PNP+PNP Complex Bipolar Digital Transistor -50V -100mA HEF=80 R1=2.2KΩ R2=47KΩ 150mW/0.15W SOT-353/SC-88A/SC70-5 marking PD switching inverting interface driver circuit
|
V(BR) CBO Collector-Base Voltage |
-50V |
|
V(BR) CEO Collector-Emitter Voltage |
-50V |
| Collector Current(IC) | -100MA |
| Input Resistance(R1) | 2.2KΩ |
| Base-Emitter Resistance(R2) | 47KΩ |
| Base-Emitter Input Resistance Ratio (R1/R2) | 0.0468 |
| DC Current Gain(hFE) | 80 |
| Transtion Frequency(fT) | 150MHZ |
| Power Dissipation （Pd） | 150MW/0.15W |
| Description & Applications | RT2P09M is a composite transistor with built-in bias resistor
FEATURE
●Built-in bias resistor ( R1=2.2 KΩ , R2=47KΩ )
●Mini package for easy mounting
APPLICATION
Inverted circuit , switching circuit , interface circuit , driver circuit
|
| Technical Documentation Download | Read Online |
