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RT5P136C-T12-1 PNP transistors（BJT） -50V -500mA/-0.5A 150MHz -300mV/-0.3V SOT-23/SC-59 marking P6 switching circuit，/interface circuit/drive circuit
| 集电极-基极反向击穿电压V(BR)CBO Collector-Base Voltage(VCBO) | -50V |
| 集电极-发射极反向击穿电压V(BR)CEO Collector-Emitter Voltage(VCEO) | −50V |
| 集电极连续输出电流IC Collector Current(IC) | −500mA/-0.5A |
| 截止频率fT Transtion Frequency(fT) | 150MHz |
| 直流电流增益hFE DC Current Gain(hFE) | |
| 管压降VCE（sat） Collector-Emitter SaturationVoltage | -300mV/-0.3V |
| 耗散功率Pc PoWer Dissipation | 200mW/0.2W |
| Description & Applications | SILICON PNP EPITAXIAL TYPE For switching applications FEATURE High collector current MIni package for mounting APPLICATION Inverted circuit,switching circuit,interface circuit,driver circuit |
| 描述与应用 | 硅PNP外延型 为开关应用 特写 高集电极电流 迷你安装包 应用 倒电路，开关电路，接口电路，驱动电路 |
