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RTQ045N03 MOSFET N-Channel 30V 4.5A SOT-163/TSMT6/SOT23-6 marking QM
| 最大源漏极电压Vds Drain-Source Voltage | 30V |
| 最大栅源极电压Vgs(±) Gate-Source Voltage | 12V |
| 最大漏极电流Id Drain Current | 4.5A |
| 源漏极导通电阻ΩRds DΩ/Ohmain-SouΩ/Ohmce On-State Ω/Ohmesistance | 60mΩ@ VGS =2.5V, ID =4.5A |
| 开启电压Vgs（th） Gate-Source Threshold Voltage | 0.5~1.5V |
| 耗散功率Pd Power Dissipation | 2W |
| Description & Applications | Features 1) Low on-resistance. 2) Built-in G-S Protection Diode. 3) Small and Surface Mount Package (TSMT6) . Application Power switching, DC / DC converter. |
| 描述与应用 | 特点 1）低导通电阻。 2）内置G-S的保护二极管。 3）小和表面贴装封装（TSMT6）。 应用 电源开关，DC / DC变换器。 |
