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RUM003N02 MOSFET N-Channel 20V 300mA/0.3A sot-723/VMT3 marking QT logic level
| 最大源漏极电压Vds Drain-Source Voltage | 20V |
| 最大栅源极电压Vgs(±) Gate-Source Voltage | 8V |
| 最大漏极电流Id Drain Current | 300mA/0.3A |
| 源漏极导通电阻ΩRds DΩ/Ohmain-SouΩ/Ohmce On-State Ω/Ohmesistance | 1.0Ω/Ohm @300mA,4V |
| 开启电压Vgs（th） Gate-Source Threshold Voltage | 0.3-1.0V |
| 耗散功率Pd Power Dissipation | 150mW/0.15W |
| Description & Applications | 2.5V Drive Nch MOSFET Silicon N-channel MOSFET 1) Low on-resistance. 2) Fast switching speed. 3) Low voltage drive (2.5V) makes this device ideal for portable equipment. 4) Drive circuits can be simple. 5) Parallel use is easy |
| 描述与应用 | 2.5V驱动N沟道MOSFET 硅N沟道MOSFET 1）低导通电阻。 2）快速开关速度。 3）低电压驱动（2.5V）使该器件理想用于 便携式设备。 4）驱动电路可以很简单。 5）并行使用容易 |
