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S9015 PNP transistors（BJT） -50V -100mA/-0.1A 200~1000 -300mV/-0.3V SOT-23 marking M6 low-frequency/low noise amplifier
| 集电极-基极反向击穿电压V(BR)CBO Collector-Base Voltage(VCBO) | -50V |
| 集电极-发射极反向击穿电压V(BR)CEO Collector-Emitter Voltage(VCEO) | −45V |
| 集电极连续输出电流IC Collector Current(IC) | −100mA/-0.1A |
| 截止频率fT Transtion Frequency(fT) | |
| 直流电流增益hFE DC Current Gain(hFE) | 200~1000 |
| 管压降VCE（sat） Collector-Emitter SaturationVoltage | -300mV/-0.3V |
| 耗散功率Pc PoWer Dissipation | 200mW/0.2W |
| Description & Applications | Silicon Epitaxial Planar Transistor FEATURES Complementary To S9014. Lead-free Excellent HFE Linearity. APPLICATIONS Low frequency , low noise amplifier. |
| 描述与应用 | 硅外延平面晶体管 特点 互补S9014。 无铅 优秀HFE线性。 应用 低频率，低噪声放大器。 |
