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SBT5551 NPN Transistors(BJT) 180V 600mA/0.6a 100MHz~400MHz 80~250 500mV/0.5V SOT-23/SC-59 marking FNF
| 集电极-基极反向击穿电压V(BR)CBO Collector-Base Voltage(VCBO) | 180V |
| 集电极-发射极反向击穿电压V(BR)CEO Collector-Emitter Voltage(VCEO) | 160V |
| 集电极连续输出电流IC Collector Current(IC) | 600mA/0.6A |
| 截止频率fT Transtion Frequency(fT) | 100MHz~400MHz |
| 直流电流增益hFE DC Current Gain(hFE) | 80~250 |
| 管压降VCE（sat） Collector-Emitter Saturation Voltage | 500mV/0.5V |
| 耗散功率Pc Power Dissipation | 200mW/0.2W |
| Description & Applications | Features • NPN Silicon Transistor • high collector breakdown voltage : VCBO = 180V, VCEO = 160V • Low collector saturation voltage : VCE(sat)=0.5V(MAX.) • Complementary pair with SBT5401 Descriptions • General purpose amplifier • High voltage application |
| 描述与应用 | 特点 •NPN硅晶体管 •高集电极击穿电压：VCBO=180V，VCEO=160V •低集电极饱和电压VCE（星期六）= 0.5V（最大值） •互补配对SBT5401 简述 •通用放大器 •高电压施加 |
