SCH2807 complex FET MOSFET+schottky diode 20V 1.2A 500mA/0.5A 0.46V SOT-563/SCH6 marking QG low on-resistance/ultra high-speed switch/short reverse recovery time/low forward voltage|Welcome to Eric Online Store - Shenzhen ERIC Electronics Co., Ltd.

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SCH2807 complex FET MOSFET+schottky diode 20V 1.2A 500mA/0.5A 0.46V SOT-563/SCH6 marking QG low on-resistance/ultra high-speed switch/short reverse recovery time/low forward voltage

Model：SCH2807
Mark / screen / code / typing：QG
Manufacturer：
Date Code：05+NOPB
Package：SOT-563/SCH6
Standard Package：5000
Min Order：10

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Product description

最大源漏极电压Vds Drain-Source Voltage	N沟道 N-Channel
最大栅源极电压Vgs(±) Gate-Source Voltage	20V
最大漏极电流Id Drain Current	15V
源漏极导通电阻Rds Drain-Source On-State Resistance	1.2A
开启电压Vgs（th） Gate-Source Threshold Voltage	320mΩ@ VGS =10V, ID =600mA
耗散功率Pd Power Dissipation	1.2~2.6V
Description & Applications	肖特基二极管SBD Schottky Barrier Diodes
描述与应用	15V

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