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SCH2807 complex FET MOSFET+schottky diode 20V 1.2A 500mA/0.5A 0.46V SOT-563/SCH6 marking QG low on-resistance/ultra high-speed switch/short reverse recovery time/low forward voltage
| 最大源漏极电压Vds Drain-Source Voltage | N沟道 N-Channel |
| 最大栅源极电压Vgs(±) Gate-Source Voltage | 20V |
| 最大漏极电流Id Drain Current | 15V |
| 源漏极导通电阻Rds Drain-Source On-State Resistance | 1.2A |
| 开启电压Vgs（th） Gate-Source Threshold Voltage | 320mΩ@ VGS =10V, ID =600mA |
| 耗散功率Pd Power Dissipation | 1.2~2.6V |
| Description & Applications | 肖特基二极管SBD Schottky Barrier Diodes |
| 描述与应用 | 15V |
