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SI1013X MOSFET P-Channel -20V -400mA 0.8ohm SOT-523 marking BAA/BGA low on-resistance power MOSFET 2000VESD protection
| 最大源漏极电压Vds Drain-Source Voltage | -20V |
| 最大栅源极电压Vgs(±) Gate-Source Voltage | 6V |
| 最大漏极电流Id Drain Current | -0.4A |
| 源漏极导通电阻Rds Drain-Source On-State Resistance | 0.8Ω @-350mA,-4.5V |
| 开启电压Vgs（th） Gate-Source Threshold Voltage | -0.45V |
| 耗散功率Pd Power Dissipation | 175mW/0.175W |
| Description & Applications | FEATURES • Halogen-free Option Available • High-Side Switching • Low On-Resistance: 1.2 Ω • Low Threshold: 0.8 V (Typ.) • Fast Switching Speed: 14 ns • 1.8 V Operation • TrenchFET Power MOSFETs • 2000 V ESD Protection |
| 描述与应用 | •无卤股权 •高边开关 •低导通电阻：1.2Ω •低阈值：0.8 V（典型值） •开关速度快：14纳秒 •1.8 V操作 •的TrenchFET 功率MOSFET •2000 V ESD保护 |
