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SI2312DS MOSFET N-Channel 20V 4.9A SOT-23/SC-59 marking c2 low on-resistance

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Product description
最大源漏极电压Vds Drain-Source Voltage20V
最大栅源极电压Vgs(±) Gate-Source Voltage8V
最大漏极电流Id Drain Current4.9A
源漏极导通电阻ΩRds DΩ/Ohmain-SouΩ/Ohmce On-State Ω/Ohmesistance0.033Ω/Ohm @5A,4.5V
开启电压Vgs(th) Gate-Source Threshold Voltage0.45-0.85V
耗散功率Pd Power Dissipation1.25W
Description & ApplicationsN-Channel 20-V (D-S) MOSFET
描述与应用N沟道20-V(D-S的MOSFET
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