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SI3443DV-T1 MOSFET P-Channel -20V -3.4A 100mohm SOT-163 marking 43

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Product description
最大源漏极电压Vds
Drain-Source Voltage
-20V
最大栅源极电压Vgs(±)
Gate-Source Voltage
-12V
最大漏极电流Id
Drain Current
-3.4A
源漏极导通电阻Rds
Drain-Source On-State
Resistance
100mΩ@ VGS = -2.5V, ID = -3.7A
开启电压Vgs(th)
Gate-Source Threshold Voltage
-0.6~-1.4V
耗散功率Pd
Power Dissipation
1.1W
Description & ApplicationsP-Channel 2.5-V (G-S) MOSFET
描述与应用P沟道2.5-V(G-S)的MOSFET
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