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2SK2951 MOSFET N-Channel 200V 1A SOT-89 marking KS high-speed power switch/low on-resistance/4V gate driver
| 最大源漏极电压Vds Drain-Source Voltage | 200V |
| 最大栅源极电压Vgs(±) Gate-Source Voltage | 20V |
| 最大漏极电流Id Drain Current | 1A |
| 源漏极导通电阻ΩRds DΩ/Ohmain-SouΩ/Ohmce On-State Ω/Ohmesistance | 2.5Ω/Ohm @500mA,10V |
| 开启电压Vgs（th） Gate-Source Threshold Voltage | 2.0-3.0V |
| 耗散功率Pd Power Dissipation | 3.5W |
| Description & Applications | N-Channel Silicon MOSFET Ultrahigh-Speed Switching Applications Features Silicon N Channel MOS FET Ultrahigh-Speed Switching Applications Low ON-resistance Ultrahigh-speed switching |
| 描述与应用 | N-沟道硅MOSFET 超高速开关应用 特性 硅N沟道MOS FET 超高速开关应用 低导通电阻 超高速开关 |
