Scavenging browsing Mobile
Hot Search： SSM3K35MFV SSM3J36MFV 2SK3376TT-B
SL12 SBD Schottky Barrier Diodes 20V 1A 445mV/0.445V SMA/DO-214AC marking SL2
| 反向电压Vr Reverse Voltage | 20V |
| 平均整流电流Io AVerage Rectified Current | 1A |
| 最大正向压降VF Forward Voltage(Vf) | 445mV/0.445V |
| 最大耗散功率Pd Power dissipation | |
| Description & Applications | High Current Surface Mount PNP Silicon Low VCE(sat) Transistor for Battery Operated Applications •Plastic package has Underwriters Laboratory •Low profile package •Metal silicon junction, majority carrier conduction • Low power loss, high efficiency •High current capability, low forward voltage drop •High surge capability |
| 描述与应用 | 高电流表面贴装 PNP硅低VCE（SAT） 电池晶体管 供电应用 •塑料包装 •薄型包装 •金属硅交界处，大部分载波传导 •低功耗，高效率 •高电流能力，低正向压降 •高浪涌能力 |
