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SMBTA56 PNP transistors（BJT） -80V -500mA/-0.5A 100MHz 100 -250mV/-0.25V SOT-23/SC-59 marking 2G low collector emitter saturation voltage
| 集电极-基极反向击穿电压V(BR)CBO Collector-Base Voltage(VCBO) | -80V |
| 集电极-发射极反向击穿电压V(BR)CEO Collector-Emitter Voltage(VCEO) | −80V |
| 集电极连续输出电流IC Collector Current(IC) | −500mA/-0.5A |
| 截止频率fT Transtion Frequency(fT) | 100MHz |
| 直流电流增益hFE DC Current Gain(hFE) | 100 |
| 管压降VCE（sat） Collector-Emitter SaturationVoltage | -250mV/-0.25V |
| 耗散功率Pc PoWer Dissipation | 330mW/0.33W |
| Description & Applications | PNP Silicon AF Transistor • Low collector-emitter saturation voltage • Complementary type: SMBTA06 • Pb-free • Qualified according AEC Q101 |
| 描述与应用 | PNP硅对焦晶体管 •低集电极 - 发射极饱和电压 •互补类型：SMBTA06 •无铅 •符合AEC Q101 |
